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SAMSUNG SSD 990 EVO Plus 1TB M.2 NVMe PCIe

SAMSUNG SSD 990 EVO Plus 1TB M.2 NVMe PCIe
SAMSUNG SSD 990 EVO Plus 1TB M.2 NVMe PCIe
SAMSUNG SSD 990 EVO Plus 1TB M.2 NVMe PCIe
SAMSUNG SSD 990 EVO Plus 1TB M.2 NVMe PCIe
SAMSUNG SSD 990 EVO Plus 1TB M.2 NVMe PCIe
SAMSUNG SSD 990 EVO Plus 1TB M.2 NVMe PCIe
SAMSUNG SSD 990 EVO Plus 1TB M.2 NVMe PCIe
SAMSUNG SSD 990 EVO Plus 1TB M.2 NVMe PCIe
SAMSUNG SSD 990 EVO Plus 1TB M.2 NVMe PCIe
  • Stock: 2
  • Brand: SAMSUNG
  • Model: MZ-V9S1T0BW
  • Weight: 0.10kg
  • Dimensions (Length x Width x Height): 15.00cm x 10.00cm x 2.00cm
  • EAN: 8806095575674
  • Garantija (mėnesiai): 60
  • Prekės kodas: 20397
238.99€
Ex Tax: 197.51€

Likučiai sandėliuose

Sandėlis Kaina Kiekis Pristatymo laikas
NL1 214.99€ 98 10-15
DE4 214.99€ 86 10-15
PL1 230.99€ 28 5-10
DE2 234.99€ 48 10-15
LT1 238.99€ 2 2-5
LT2 249.99€ 3 2-5
DE5 265.99€ 78 10-15
LV1 276.99€ 9 2-5
LT3 255€ 0 Ask
DE1 274.98€ 0 Ask
DE5 502.98€ 0 Ask
The Samsung 990 EVO Plus is an internal solid state drive designed for demanding applications. With a robust capacity of 1 TB, it ensures ample storage for a variety of files and applications. The drive utilizes PCI Express 5.0 and boasts internal data rates of up to 7150 MBps, allowing for quick data retrieval and minimal load times. Samsung’s V-NAND TLC Technology enhances performance and endurance, making it suitable for both everyday computing and intensive tasks. This drive is engineered to withstand a range of environmental conditions, operating effectively in temperatures from 0°C to 70°C and withstanding storage temperatures as low as -40°C and as high as 85°C. It features TRIM support and an Auto Garbage Collection Algorithm, ensuring optimal performance over time. Security is prioritized with hardware encryption and compliance with TCG Opal Encryption 2.0, safeguarding data against unauthorized access.
Product Description: Samsung 990 EVO Plus MZ-V9S1T0 - SSD - 1 TB - PCIe 5.0 x2 (NVMe) | Type: Solid state drive - internal | Capacity: 1 TB | Hardware Encryption: Yes | Encryption Algorithm: 256-bit AES | NAND Flash Memory Type: Triple-level cell (TLC) | Form Factor: M.2 2280 | Interface: PCIe 5.0 x2 (NVMe) | Features: Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Device Sleep support, Host Memory Buffer (HMB), TRIM support, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667 | Dimensions (WxDxH): 22.15 mm x 80.15 mm x 2.38 mm | Weight: 9 g | Manufacturer Warranty: 5-year warranty
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